Open AccessCharacteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering
Author(s) -
Kohei Ueno,
Atsushi Kobayashi,
Hiroshi Fujioka
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5103185
Subject(s) - sputtering , doping , materials science , electron mobility , optoelectronics , scattering , wide bandgap semiconductor , analytical chemistry (journal) , nanotechnology , thin film , chemistry , optics , physics , chromatography
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