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Below-bandgap photoluminescence from GaAs substrates induced by pre-MBE-growth treatments
Author(s) -
Ronel Christian Roca,
Kosei Fukui,
Hiroto Mizuno,
Mikihito Suzuki,
Itaru Kamiya
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5102088
Subject(s) - photoluminescence , materials science , annealing (glass) , vacancy defect , optoelectronics , band gap , luminescence , molecular beam epitaxy , excitation , wide bandgap semiconductor , crystallographic defect , analytical chemistry (journal) , epitaxy , nanotechnology , crystallography , chemistry , metallurgy , engineering , layer (electronics) , chromatography , electrical engineering

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