Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations | Zendy

Tsubasa Matsumoto | Zendy; Hiromitsu Kato | Zendy; Toshiharu Makino | Zendy; Masahiko Ogura | Zendy; Daisuke Takeuchi | Zendy; Satoshi Yamasaki | Zendy; Takao Inokuma | Zendy; Norio Tokuda | Zendy

Open Access

Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations

Author(s) -

Tsubasa Matsumoto,

Hiromitsu Kato,

Toshiharu Makino,

Masahiko Ogura,

Daisuke Takeuchi,

Satoshi Yamasaki,

Takao Inokuma,

Norio Tokuda

Publication year - 2019

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.5100328

Subject(s) - mosfet , diamond , materials science , electron mobility , field effect transistor , threshold voltage , optoelectronics , electric field , electrical resistivity and conductivity , transistor , wide bandgap semiconductor , analytical chemistry (journal) , condensed matter physics , voltage , chemistry , electrical engineering , physics , composite material , quantum mechanics , chromatography , engineering

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