Open AccessHigh-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment
Author(s) -
Zirui Liu,
Jianfeng Wang,
Hong Gu,
Yumin Zhang,
Weifan Wang,
Ruisheng Xiong,
Ke Xu
Publication year - 2019
Publication title -
aip advances
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5100251
Subject(s) - reverse leakage current , materials science , ion implantation , schottky diode , optoelectronics , schottky barrier , breakdown voltage , diode , wide bandgap semiconductor , leakage (economics) , ion , voltage , analytical chemistry (journal) , chemistry , electrical engineering , organic chemistry , economics , macroeconomics , engineering , chromatography
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