Open AccessImproved contact resistivity and enhanced mobility of metal-graphene FET by inserting ultra-thin MoOx layer at source/drain region
Author(s) -
Yuan Zhang,
Xin-Ping Qu
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5100198
Subject(s) - graphene , materials science , contact resistance , electron mobility , annealing (glass) , electrode , doping , optoelectronics , x ray photoelectron spectroscopy , layer (electronics) , nanotechnology , contact area , composite material , chemical engineering , chemistry , engineering
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