Open AccessHydrogen concentration at a-Si:H/c-Si heterointerfaces—The impact of deposition temperature on passivation performance
Author(s) -
Kazuhiro Gotoh,
Markus Wilde,
Shinya Kato,
Shohei Ogura,
Yasuyoshi Kurokawa,
Katsuyuki Fukutani,
Noritaka Usami
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5100086
Subject(s) - passivation , dangling bond , hydrogen , silicon , materials science , analytical chemistry (journal) , amorphous silicon , nuclear reaction analysis , annealing (glass) , heterojunction , ellipsometry , deposition (geology) , crystalline silicon , thin film , layer (electronics) , chemistry , nanotechnology , optoelectronics , metallurgy , paleontology , organic chemistry , chromatography , sediment , biology
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