Open AccessFormation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties
Author(s) -
Shin Sato,
Takuma Narahara,
Yuta Abe,
Yasuto Hijikata,
T. Umeda,
Takeshi Ohshima
Publication year - 2019
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5099327
Subject(s) - photoluminescence , annealing (glass) , materials science , vacancy defect , irradiation , nitrogen , impurity , ion , infrared , ion beam , optoelectronics , quenching (fluorescence) , ion implantation , thermal , analytical chemistry (journal) , chemistry , optics , crystallography , fluorescence , physics , organic chemistry , chromatography , meteorology , nuclear physics , composite material
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