Theoretical investigation of the interface fluctuation causing low channel conductivity at SiO2/SiC interfaces through the self-energy and average Green’s function
Author(s) -
Hironori Yoshioka
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5098989
Subject(s) - density of states , fermi level , condensed matter physics , mosfet , conductivity , boltzmann equation , relaxation (psychology) , materials science , chemistry , statistical physics , physics , thermodynamics , quantum mechanics , electron , voltage , psychology , social psychology , transistor
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom