Open AccessInvestigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique
Author(s) -
Yoshihiro Irokawa,
Toshihide Nabatame,
Kazuya Yuge,
Akira Uedono,
Akihiko Ohi,
Naoki Ikeda,
Yasuo Koide
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5098489
Subject(s) - materials science , band gap , annealing (glass) , capacitance , optoelectronics , wide bandgap semiconductor , fermi level , semiconductor , irradiation , condensed matter physics , atomic physics , molecular physics , chemistry , electrode , electron , physics , quantum mechanics , composite material , nuclear physics
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