Design considerations for three-dimensional betavoltaics
Author(s) -
John W. Murphy,
Lars F. Voss,
Clint D. Frye,
Qinghui Shao,
K. Kazkaz,
M. A. Stoyer,
R. Henderson,
Rebecca J. Nikolić
Publication year - 2019
Publication title -
aip advances
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5097775
Subject(s) - silicon , monte carlo method , semiconductor device , diode , semiconductor , materials science , power (physics) , range (aeronautics) , work (physics) , power density , power semiconductor device , optoelectronics , computational physics , nuclear engineering , physics , nanotechnology , engineering , statistics , mathematics , layer (electronics) , quantum mechanics , composite material , thermodynamics
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