Open AccessChemical bonding and band alignment at X2O3/GaN (X = Al, Sc) interfaces
Author(s) -
Zhaofu Zhang,
Yuzheng Guo,
John Robertson
Publication year - 2019
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5097567
Subject(s) - supercell , materials science , wide bandgap semiconductor , band gap , chemical bond , valence band , electronic band structure , band offset , conduction band , condensed matter physics , semimetal , density functional theory , band diagram , optoelectronics , molecular physics , electron , computational chemistry , chemistry , physics , thunderstorm , organic chemistry , quantum mechanics , meteorology
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