Open AccessImprovement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers
Author(s) -
Takashi Onaya,
Toshihide Nabatame,
Naomi Sawamoto,
Akihiko Ohi,
Naoki Ikeda,
Takahiro Nagata,
Atsushi Ogura
Publication year - 2019
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5096626
Subject(s) - nucleation , materials science , ferroelectricity , thin film , nanocrystalline material , tetragonal crystal system , orthorhombic crystal system , epitaxy , analytical chemistry (journal) , crystallography , grain size , transmission electron microscopy , layer (electronics) , mineralogy , crystal structure , nanotechnology , optoelectronics , dielectric , composite material , chemistry , organic chemistry , chromatography
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