Open AccessAluminum acceptor activation and charge compensation in implanted p-type 4H-SiC
Author(s) -
Julietta Weisse,
Martin Hauck,
M. Krieger,
Anton J. Bauer,
Tobias Erlbacher
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5096440
Subject(s) - acceptor , silicon carbide , compensation (psychology) , aluminium , materials science , doping , silicon , ion implantation , node (physics) , analytical chemistry (journal) , optoelectronics , condensed matter physics , chemistry , ion , metallurgy , physics , psychology , organic chemistry , chromatography , quantum mechanics , psychoanalysis
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