Open AccessAnalysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes
Author(s) -
Stefan Petzold,
E. Miranda,
S. U. Sharath,
J. Muñoz-Gorriz,
Tobias Vogel,
Eszter Piros,
Nico Kaiser,
Robert Eilhardt,
Alexander Zintler,
Leopoldo MolinaLuna,
J. Suñé,
Lambert Alff
Publication year - 2019
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5094864
Subject(s) - resistive random access memory , materials science , stack (abstract data type) , thermal conduction , optoelectronics , voltage , memristor , electronic engineering , computer science , electrical engineering , engineering , composite material , programming language
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