Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire | Zendy

A. Y. Polyakov | Zendy; N. B. Smirnov | Zendy; Ivan Shchemerov | Zendy; E. B. Yakimov | Zendy; В. И. Николаев | Zendy; С. И. Степанов | Zendy; А. И. Печников | Zendy; А. В. Черных | Zendy; К. Д. Щербачев | Zendy; Ali Sehpar Shikoh | Zendy; А. I. Kochkova | Zendy; A.A. Vasil'ev | Zendy; S. J. Pearton | Zendy

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Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire

Author(s) -

A. Y. Polyakov,

N. B. Smirnov,

Ivan Shchemerov,

E. B. Yakimov,

В. И. Николаев,

С. И. Степанов,

А. И. Печников,

А. В. Черных,

К. Д. Щербачев,

Ali Sehpar Shikoh,

А. I. Kochkova,

A.A. Vasil'ev,

S. J. Pearton

Publication year - 2019

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.5094787

Subject(s) - sapphire , epitaxy , materials science , doping , analytical chemistry (journal) , deep level transient spectroscopy , spectral line , halide , shallow donor , phase (matter) , optoelectronics , silicon , optics , chemistry , inorganic chemistry , nanotechnology , laser , physics , organic chemistry , layer (electronics) , chromatography , astronomy

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