Open AccessPolarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy
Author(s) -
Alexandre Concordel,
Gwénolé Jacopin,
B. Gayral,
N. Garro,
A. Cros,
JeanLuc Rouvière,
B. Daudin
Publication year - 2019
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5094627
Subject(s) - cathodoluminescence , molecular beam epitaxy , materials science , nanowire , transmission electron microscopy , photoluminescence , optoelectronics , polarity (international relations) , wide bandgap semiconductor , etching (microfabrication) , epitaxy , layer (electronics) , chemistry , nanotechnology , luminescence , biochemistry , cell
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