Open AccessDegradation analysis of 1 MeV electron and 3 MeV proton irradiated InGaAs single junction solar cell
Author(s) -
X. B. Shen,
Abuduwayiti Aierken,
M. Heini,
Jiacheng Mo,
Qi Lei,
Xiaofan Zhao,
Momin Sailai,
Yun Xu,
Mingsheng Tan,
Yuanyuan Wu,
S.L. Lu,
Y. D. Li,
Q. Guo
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5094472
Subject(s) - solar cell , irradiation , materials science , proton , electron beam processing , carrier lifetime , optoelectronics , radiation damage , electron , degradation (telecommunications) , radiation , gallium arsenide , spectral line , silicon , optics , physics , electronic engineering , quantum mechanics , astronomy , nuclear physics , engineering
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