Open AccessPolycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass
Author(s) -
Kenta Moto,
Keisuke Yamamoto,
Toshifumi Imajo,
Takashi Suemasu,
Hiroshi Nakashima,
Kaoru Toko
Publication year - 2019
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5093952
Subject(s) - thin film transistor , materials science , crystallite , electron mobility , optoelectronics , crystallization , hall effect , thin film , transistor , phase (matter) , grain size , grain boundary , layer (electronics) , electrical resistivity and conductivity , composite material , nanotechnology , electrical engineering , metallurgy , chemical engineering , microstructure , voltage , chemistry , organic chemistry , engineering
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