Open Access(Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition
Author(s) -
Victor Fan Arcara,
B. Damilano,
G. Feuillet,
Aimeric Courville,
Sébastien Chenot,
JeanYves Duboz
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5092693
Subject(s) - chemical vapor deposition , metalorganic vapour phase epitaxy , light emitting diode , passivation , optoelectronics , materials science , layer (electronics) , hydrogen , wide bandgap semiconductor , diode , gallium nitride , nitride , epitaxy , chemistry , nanotechnology , organic chemistry
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom