Open AccessEffects of helium annealing in low-temperature and solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors
Author(s) -
Jeongmin Kim,
Ikjun Jang,
Jaewook Jeong
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5092642
Subject(s) - materials science , thin film transistor , annealing (glass) , amorphous solid , subthreshold slope , threshold voltage , indium , optoelectronics , gallium , analytical chemistry (journal) , x ray photoelectron spectroscopy , electron mobility , helium , subthreshold conduction , transistor , atomic physics , voltage , nanotechnology , chemistry , metallurgy , nuclear magnetic resonance , electrical engineering , crystallography , physics , engineering , layer (electronics) , chromatography
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