Research on thermal resistance Rthj-c of high power semiconductor light sources | Zendy

Krzysztof Baran | Zendy; Henryk Wachta | Zendy; M. Leśko | Zendy; A. Różowicz | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Research on thermal resistance Rthj-c of high power semiconductor light sources

Author(s) -

Krzysztof Baran,

Henryk Wachta,

M. Leśko,

A. Różowicz

Publication year - 2019

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.5092050

Subject(s) - casing , semiconductor , junction temperature , thermal resistance , materials science , optoelectronics , semiconductor device , thermal , power (physics) , spreading resistance profiling , engineering physics , electrical engineering , optics , mechanical engineering , engineering , silicon , physics , composite material , layer (electronics) , quantum mechanics , meteorology

The article presents the results of Rthj-c thermal resistance tests for selected high power semiconductor light sources. The thermal resistance between the junction and the casing of semiconductor light sources is one of the key parameters determining the correct junction temperature of the LED sources and its influence on the basic light and electric parameters of semiconductor light sources. The tests were carried out in accordance with the international standard JEDEC JESD51-14 using the Mentor Graphics measuring equipment.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research