Open AccessRecord combination fmax · Vbr of 25 THz·V in AlGaN/GaN HEMT with plasma treatment
Author(s) -
Minhan Mi,
Xiaohua Ma,
Ling Yang,
Yang Lu,
Bin Hou,
Meng Zhang,
Hengshuang Zhang,
Sheng Wu,
Yue Hao
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5090528
Subject(s) - high electron mobility transistor , passivation , breakdown voltage , materials science , optoelectronics , plasma , capacitance , transistor , yield (engineering) , analytical chemistry (journal) , voltage , layer (electronics) , electrical engineering , electrode , chemistry , physics , nanotechnology , metallurgy , quantum mechanics , chromatography , engineering
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