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Formation of electronic defects in crystalline silicon during hydrogen plasma treatment
Author(s) -
Shota Nunomura,
Isao Sakata,
Koji Matsubara
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5089202
Subject(s) - silicon , materials science , annealing (glass) , photocurrent , plasma , crystallographic defect , hydrogen , crystalline silicon , annihilation , electronic structure , analytical chemistry (journal) , optoelectronics , crystallography , chemistry , composite material , computational chemistry , physics , organic chemistry , quantum mechanics , chromatography

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