Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface | Zendy

Efi Dwi Indari | Zendy; Yoshiyuki Yamashita | Zendy; Ryu Hasunuma | Zendy; Takahiro Nagata | Zendy; Shigenori Ueda | Zendy; Kikuo Yamabe | Zendy

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Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface

Author(s) -

Efi Dwi Indari,

Yoshiyuki Yamashita,

Ryu Hasunuma,

Takahiro Nagata,

Shigenori Ueda,

Kikuo Yamabe

Publication year - 2019

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.5088541

Subject(s) - annealing (glass) , materials science , quantum tunnelling , x ray photoelectron spectroscopy , density of states , analytical chemistry (journal) , current density , conduction band , offset (computer science) , leakage (economics) , band offset , hydrogen , optoelectronics , chemistry , valence band , electron , condensed matter physics , band gap , nuclear magnetic resonance , metallurgy , physics , organic chemistry , chromatography , quantum mechanics , computer science , economics , macroeconomics , programming language

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