Open AccessStrain evolution of SiGe-on-insulator obtained by the Ge-condensation technique
Author(s) -
Victor Boureau,
S. Reboh,
Daniel Benoit,
Martin Hÿtch,
A. Claverie
Publication year - 2019
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5088441
Subject(s) - materials science , nmos logic , pmos logic , condensed matter physics , optoelectronics , insulator (electricity) , composite material , transistor , physics , quantum mechanics , voltage
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