Open AccessThe critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer
Author(s) -
Ranim Mohamad,
M. P. Chauvat,
S. Kret,
Piero Gamarra,
S.L. Delage,
Viwanou Hounkpati,
C. Lacam,
Jun Chen,
P. Ruterana
Publication year - 2019
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5088109
Subject(s) - materials science , indium , fabrication , optoelectronics , vacancy defect , degradation (telecommunications) , lattice (music) , transistor , layer (electronics) , nitride , condensed matter physics , crystallography , nanotechnology , electronic engineering , chemistry , medicine , alternative medicine , physics , pathology , quantum mechanics , voltage , acoustics , engineering
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