Open AccessGain characteristics of InGaN quantum wells with AlGaInN barriers
Author(s) -
Hanlin Fu,
Wei Sun,
Onoriode N. Ogidi-Ekoko,
Justin C. Goodrich,
Nelson Tansu
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5086979
Subject(s) - optoelectronics , quantum well , materials science , light emitting diode , wide bandgap semiconductor , diode , spontaneous emission , laser , semiconductor laser theory , metalorganic vapour phase epitaxy , current density , band gap , optics , nanotechnology , epitaxy , physics , quantum mechanics , layer (electronics)
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