Open AccessAnomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN
Author(s) -
Ievgen Boturchuk,
L. Scheffler,
A. Nylandsted Larsen,
Brian Julsgaard
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5086796
Subject(s) - bistability , metalorganic vapour phase epitaxy , materials science , arrhenius equation , work (physics) , optoelectronics , hydrogen , wide bandgap semiconductor , amplitude , activation energy , condensed matter physics , atomic physics , molecular physics , chemical physics , nanotechnology , thermodynamics , chemistry , physics , optics , epitaxy , layer (electronics) , organic chemistry
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