Direct observation of electronic structure change by resistance random access memory effect in amorphous alumina | Zendy

Masato Kubota | Zendy; Seisuke Nigo | Zendy; Seiichi Kato | Zendy; Kenta Amemiya | Zendy

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Direct observation of electronic structure change by resistance random access memory effect in amorphous alumina

Author(s) -

Masato Kubota,

Seisuke Nigo,

Seiichi Kato,

Kenta Amemiya

Publication year - 2019

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.5086212

Subject(s) - amorphous solid , resistive random access memory , spectral line , electronic structure , absorption spectroscopy , oxygen , materials science , condensed matter physics , absorption (acoustics) , enhanced data rates for gsm evolution , absorption edge , electron , band gap , thin film , analytical chemistry (journal) , chemistry , molecular physics , nanotechnology , crystallography , optoelectronics , optics , physics , composite material , electrode , telecommunications , organic chemistry , quantum mechanics , astronomy , chromatography , computer science

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