Open AccessNanoscale analysis of electrical junctions in InGaP nanowires grown by template-assisted selective epitaxy
Author(s) -
Valerio Piazza,
Stephan Wirths,
Nicolas Bologna,
Ashraf Ahmed,
Fabien Bayle,
Heinz Schmid,
F. H. Julien,
Maria Tchernycheva
Publication year - 2019
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5085405
Subject(s) - materials science , photocurrent , nanowire , doping , optoelectronics , dopant , substrate (aquarium) , electron beam induced current , molecular beam epitaxy , p–n junction , nanotechnology , epitaxy , semiconductor , layer (electronics) , silicon , oceanography , geology
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