Behavior of Raman modes in InPBi alloys under hydrostatic pressure
Author(s) -
Changcheng Zheng,
Xiaohu Wang,
Jiqiang Ning,
Kun Ding,
Baoquan Sun,
Shumin Wang,
Shijie Xu
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5085132
Subject(s) - raman spectroscopy , hydrostatic pressure , bismuth , diamond anvil cell , materials science , diamond , hydrostatic equilibrium , doping , analytical chemistry (journal) , high pressure , chemistry , optics , thermodynamics , composite material , metallurgy , optoelectronics , physics , quantum mechanics , chromatography
Raman spectra of InPBi alloys with bismuth amount 0.3%-2.0% were measured under hydrostatic pressure in diamond anvil cell up to ∼4 GPa at room temperature. Two bismuth related Raman modes were identified and their evolutions under pressure were studied. The linear pressure coefficients of these two modes are determined to be 1.292 and 2.169 cm-1/GPa, respectively. The different behaviors of these two modes under pressure suggest that they may have distinct origins. InP related Raman modes were also investigated including two InP related modes caused by Bi doping.Raman spectra of InPBi alloys with bismuth amount 0.3%-2.0% were measured under hydrostatic pressure in diamond anvil cell up to ∼4 GPa at room temperature. Two bismuth related Raman modes were identified and their evolutions under pressure were studied. The linear pressure coefficients of these two modes are determined to be 1.292 and 2.169 cm-1/GPa, respectively. The different behaviors of these two modes under pressure suggest that they may have distinct origins. InP related Raman modes were also investigated including two InP related modes caused by Bi doping.
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