Open AccessTemperature dependence of the Seebeck coefficient of epitaxial β-Ga2O3 thin films
Author(s) -
Johannes Boy,
Martin Handwerg,
Robin Ahrling,
R. Mitdank,
G. Wagner,
Zbigniew Galazka,
Saskia F. Fischer
Publication year - 2019
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5084791
Subject(s) - seebeck coefficient , materials science , thermoelectric effect , condensed matter physics , scattering , thin film , hall effect , epitaxy , electrical resistivity and conductivity , phonon scattering , analytical chemistry (journal) , thermal conductivity , thermodynamics , optics , chemistry , nanotechnology , composite material , physics , layer (electronics) , quantum mechanics , chromatography
The temperature dependence of the Seebeck coefficient of homoepitaxial metal organic vapor phase grown, silicon doped β-Ga2O3 thin films was measured relative to aluminum. For room temperature, we found the relative Seebeck coefficient of Sβ-Ga2O3-Al=(−300±20) µV/K. At high bath temperatures T > 240 K, the scattering is determined by electron-phonon-interaction. At lower bath temperatures between T = 100 K and T = 300 K, an increase in the magnitude of the Seebeck coefficient is explained in the frame of Stratton’s formula. The influence of different scattering mechanisms on the magnitude of the Seebeck coefficient is discussed and compared with Hall measurement results.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom