z-logo
open-access-imgOpen Access
Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility
Author(s) -
Daichi Takahara,
Kenta Moto,
Toshifumi Imajo,
Takashi Suemasu,
Kaoru Toko
Publication year - 2019
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5084191
Subject(s) - crystallization , materials science , doping , electron mobility , crystallite , nucleation , germanium , optoelectronics , fermi level , electron , analytical chemistry (journal) , silicon , chemical engineering , chemistry , metallurgy , engineering , physics , organic chemistry , chromatography , quantum mechanics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom