Control of metal-insulator transition temperature in VO2 thin films grown on RuO2/TiO2 templates by strain modification | Zendy

Heungsoo Kim | Zendy; Nicholas A. Charipar | Zendy; José Figueroa | Zendy; N. S. Bingham | Zendy; Alberto Piqué | Zendy

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Control of metal-insulator transition temperature in VO2 thin films grown on RuO2/TiO2 templates by strain modification

Author(s) -

Heungsoo Kim,

Nicholas A. Charipar,

José Figueroa,

N. S. Bingham,

Alberto Piqué

Publication year - 2019

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.5083848

Subject(s) - materials science , thin film , pulsed laser deposition , metal–insulator transition , epitaxy , electrical resistivity and conductivity , layer (electronics) , heterojunction , buffer (optical fiber) , metal , analytical chemistry (journal) , optoelectronics , composite material , nanotechnology , metallurgy , chemistry , electrical engineering , engineering , chromatography

Ruthenium dioxide (RuO2) is an ideal buffer layer for vanadium dioxide (VO2) heterostructures due to its high electrical conductivity and matching crystal structure with metallic VO2. VO2 thin film...

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