Demonstration of distributed capacitance compensation in a metal-insulator-metal infrared rectenna incorporating a traveling-wave diode | Zendy

Bradley Pelz | Zendy; Garret Moddel | Zendy

Open Access

Demonstration of distributed capacitance compensation in a metal-insulator-metal infrared rectenna incorporating a traveling-wave diode

Author(s) -

Bradley Pelz,

Garret Moddel

Publication year - 2019

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.5083155

Subject(s) - rectenna , responsivity , diode , materials science , capacitance , optoelectronics , insulator (electricity) , transmission line , metal insulator metal , schottky diode , rectification , voltage , electrical engineering , capacitor , chemistry , electrode , photodetector , engineering

We experimentally demonstrate that the transmission line impedance of traveling-wave diodes can circumvent resistance-capacitance time-constant limitations of metal-insulator-metal diodes in rectennas operating at optical frequencies. We fabricated low resistance (380 Ω) and moderate responsivity (0.46 A/W) metal-insulator-metal traveling-wave diodes. When a rectenna incorporating the traveling-wave diode was illuminated with 10.6 μm radiation, it produced a peak system responsivity of 130 μA/W and a detectivity of 1.0 × 10 4 Jones. These results agree with the simulated device performance and exceed the response of an equivalent lumped-element metal-insulator-metal rectenna.We experimentally demonstrate that the transmission line impedance of traveling-wave diodes can circumvent resistance-capacitance time-constant limitations of metal-insulator-metal diodes in rectennas operating at optical frequencies. We fabricated low resistance (380 Ω) and moderate responsivity (0.46 A/W) metal-insulator-metal traveling-wave diodes. When a rectenna incorporating the traveling-wave diode was illuminated with 10.6 μm radiation, it produced a peak system responsivity of 130 μA/W and a detectivity of 1.0 × 10 4 Jones. These results agree with the simulated device performance and exceed the response of an equivalent lumped-element metal-insulator-metal rectenna.

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