Density control of GaN quantum dots on AlN single crystal
Author(s) -
Sebastian Tamariz,
Gordon Callsen,
N. Grandjean
Publication year - 2019
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5083018
Subject(s) - quantum dot , photoluminescence , materials science , molecular beam epitaxy , sapphire , optoelectronics , dislocation , wide bandgap semiconductor , single crystal , epitaxy , crystal growth , gallium nitride , condensed matter physics , nanotechnology , crystallography , optics , chemistry , laser , physics , layer (electronics) , composite material
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