Open AccessDensity of defect states retrieved from the hysteretic gate transfer characteristics of monolayer MoS2 field effect transistors
Author(s) -
Qiang Xu,
Yingri Sun,
Peng Yang,
Yaping Dan
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5082829
Subject(s) - materials science , field effect transistor , transistor , optoelectronics , deep level transient spectroscopy , monolayer , photoluminescence , capacitance , semiconductor , density of states , voltage , condensed matter physics , nanotechnology , chemistry , electrical engineering , physics , silicon , engineering , electrode
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