Open AccessNumerical simulation of different silicon nanowire field-effect transistor channel lengths for biosensing application
Author(s) -
M. F. M. Fathil,
M. H. M. Ghazali,
M. K. Md Arshad,
M. Nuzaihan M. N.,
Sh. Nadzirah,
R. M. Ayub,
A. Rahim Ruslinda,
U. Hashim,
R. F. Abdullah,
C. C. Ong,
N. Tamjis
Publication year - 2018
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.5080820
Subject(s) - nanowire , biosensor , materials science , field effect transistor , optoelectronics , silicon , transistor , silicon nanowires , nanotechnology , channel (broadcasting) , electrical engineering , voltage , engineering
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