Transient current technique for charged traps detection in silicon bonded interfaces
Author(s) -
J. Bronuzzi,
D. Bouvet,
Clémentine Charrier,
Frank Fournel,
M. Fernández,
A. Mapelli,
M. Moll,
Eric Rouchouze,
J.-M. Sallese
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5079999
Subject(s) - materials science , silicon on insulator , wafer , optoelectronics , fabrication , microelectromechanical systems , silicon , wafer bonding , transient (computer programming) , cmos , direct bonding , current (fluid) , electronic engineering , nanotechnology , electrical engineering , computer science , engineering , operating system , medicine , alternative medicine , pathology
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