Open AccessElectron injection-induced effects in Si-doped β-Ga2O3
Author(s) -
Sushrut Modak,
Jonathan Lee,
Leonid Chernyak,
Jiancheng Yang,
F. Ren,
S. J. Pearton,
Sergey Khodorov,
Igor Lubomirsky
Publication year - 2019
Publication title -
aip advances
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5079730
Subject(s) - cathodoluminescence , materials science , doping , scanning electron microscope , elongation , electron , cathode ray , diffusion , semiconductor , atomic physics , electron microscope , wide bandgap semiconductor , electron beam processing , analytical chemistry (journal) , chemistry , optoelectronics , optics , luminescence , physics , thermodynamics , chromatography , quantum mechanics , composite material , ultimate tensile strength , metallurgy
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