Temperature dependent electrical characteristics of a junction field effect transistor for cryogenic sub-attoampere charge detection | Zendy

Anahita Kavangary | Zendy; Paul Graf | Zendy; Hüseyin Azazoglu | Zendy; Meike Flebbe | Zendy; Kornelia Huba | Zendy; Hermann Nienhaus | Zendy; R. Möller | Zendy

Open Access

Temperature dependent electrical characteristics of a junction field effect transistor for cryogenic sub-attoampere charge detection

Author(s) -

Anahita Kavangary,

Paul Graf,

Hüseyin Azazoglu,

Meike Flebbe,

Kornelia Huba,

Hermann Nienhaus,

R. Möller

Publication year - 2019

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.5077039

Subject(s) - jfet , materials science , field effect transistor , electron mobility , induced high electron mobility transistor , optoelectronics , transistor , atmospheric temperature range , charge carrier , depletion region , drain induced barrier lowering , leakage (economics) , condensed matter physics , threshold voltage , analytical chemistry (journal) , voltage , electrical engineering , chemistry , semiconductor , physics , chromatography , meteorology , economics , macroeconomics , engineering

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