Open AccessElectrical properties, structural properties, and deep trap spectra of thin α-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates
Author(s) -
DaeWoo Jeon,
Hoki Son,
Jonghee Hwang,
A. Y. Polyakov,
N. B. Smirnov,
Ivan Shchemerov,
А. В. Черных,
А. I. Kochkova,
S. J. Pearton,
InHwan Lee
Publication year - 2018
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5075718
Subject(s) - materials science , epitaxy , sapphire , analytical chemistry (journal) , thin film , optoelectronics , nanotechnology , optics , chemistry , laser , physics , layer (electronics) , chromatography
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