O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by  in-situ  hybrid epitaxy | Zendy

Bin Zhang | Zendy; Wenqi Wei | Zendy; JianHuan Wang | Zendy; Hailing Wang | Zendy; Zhuang Zhao | Zendy; Lei Liu | Zendy; Hui Cong | Zendy; Qi Feng | Zendy; Huiyun Liu | Zendy; Ting Wang | Zendy; Jianjun Zhang | Zendy

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O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy

Author(s) -

Bin Zhang,

Wenqi Wei,

JianHuan Wang,

Hailing Wang,

Zhuang Zhao,

Lei Liu,

Hui Cong,

Qi Feng,

Huiyun Liu,

Ting Wang,

Jianjun Zhang

Publication year - 2019

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.5065527

Subject(s) - lasing threshold , optoelectronics , materials science , quantum dot , substrate (aquarium) , laser , silicon , quantum dot laser , photonics , epitaxy , photonic integrated circuit , gallium arsenide , silicon photonics , quantum well , semiconductor laser theory , nanotechnology , optics , semiconductor , physics , layer (electronics) , wavelength , oceanography , geology

Recent years, the emergence of hyper-scale data centers boosted the research field of integrated silicon photonics. One of the major challenges for compact photonic integrated circuits is silicon based lasers. In this paper, we demonstrate optically pumped InAs/GaAs quantum-dot micropillar laser on exact Si (001) by (111)-faceted-sawtooth Si hollow structure via IV/III-V hybrid epitaxy. The lasing threshold of InAs/GaAs quantum-dot micropillar is as low as 20 μW with the pillar diameter of 15 μm. Moreover, the micropillar laser is capable of operating at maximum temperature up to 100 °C.

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