Open AccessMethodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices
Author(s) -
Sven Besendörfer,
Elke Meißner,
A. G. Lesnik,
Jochen Friedrich,
A. Dadgar,
Tobias Erlbacher
Publication year - 2019
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5065442
Subject(s) - cathodoluminescence , materials science , heterojunction , high electron mobility transistor , leakage (economics) , dislocation , optoelectronics , transmission electron microscopy , wide bandgap semiconductor , transistor , condensed matter physics , composite material , nanotechnology , voltage , electrical engineering , physics , luminescence , economics , macroeconomics , engineering
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