Open AccessSolar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film
Author(s) -
Fikadu Alema,
B. Hertog,
Partha Mukhopadhyay,
Yuewei Zhang,
Akhil Mauze,
A. Osinsky,
Winston V. Schoenfeld,
James S. Speck,
T. J. Vogt
Publication year - 2019
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5064471
Subject(s) - photodiode , materials science , optoelectronics , responsivity , schottky diode , metalorganic vapour phase epitaxy , chemical vapor deposition , schottky barrier , photoconductivity , quantum efficiency , band gap , optics , epitaxy , diode , photodetector , nanotechnology , physics , layer (electronics)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom