z-logo
open-access-imgOpen Access
Enhancement of thermoelectric properties by lattice softening and energy band gap control in Te-deficient InTe1−δ
Author(s) -
Song Yi Back,
Hyunyong Cho,
Youngkwang Kim,
Seokyeong Byeon,
Hyungyu Jin,
Kunihito Koumoto,
JongSoo Rhyee
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5063274
Subject(s) - seebeck coefficient , condensed matter physics , thermoelectric effect , materials science , electrical resistivity and conductivity , band gap , atmospheric temperature range , debye model , thermoelectric materials , thermal conductivity , thermodynamics , composite material , physics , quantum mechanics
The InTe has intrinsically low lattice thermal conductivity κL originating from the anharmonic bonding of In1+ ion in the lattice, which scatters the phonons. Here we report the enhancement of thermoelectric properties in Te-deficient InTe1−δ (δ = 0, 0.01, 0.1, and 0.2) polycrystalline compounds by lattice softening and energy band gap opening. Te-deficiency gives rise to more weak chemical bonding between In1+ atoms and In3+Te2− clusters than those of pristine InTe, resulting in the reduction of κL near the room temperature. The weak ionic bonding is confirmed by the increase of lattice volume from the X-ray diffraction and lattice softening by the decrease of Debye temperature with increasing Te-deficiency. We observed the low lattice thermal conductivity κL of 0.53 W m−1 K−1 at 300 K for InTe0.99, which is about 25 % decreased value than those of InTe. The Te-deficiency also induces energy band gap so that the electrical resistivity and Seebeck coefficient are increased due to the decrease of carrier concentration. Temperature-dependent thermoelectric properties shows the high Seebeck coefficient at high temperature and high electrical conductivity near room temperature, resulting in the temperature-insensitive high power factor S2σ over a wide temperature range. Owing to the temperature-insensitive high power factor and intrinsic low lattice thermal conductivity by Te-deficiency, the thermoelectric performances of figure-of-merit ZT and engineering ZTeng are enhanced at mild temperature range (≤550 K).The InTe has intrinsically low lattice thermal conductivity κL originating from the anharmonic bonding of In1+ ion in the lattice, which scatters the phonons. Here we report the enhancement of thermoelectric properties in Te-deficient InTe1−δ (δ = 0, 0.01, 0.1, and 0.2) polycrystalline compounds by lattice softening and energy band gap opening. Te-deficiency gives rise to more weak chemical bonding between In1+ atoms and In3+Te2− clusters than those of pristine InTe, resulting in the reduction of κL near the room temperature. The weak ionic bonding is confirmed by the increase of lattice volume from the X-ray diffraction and lattice softening by the decrease of Debye temperature with increasing Te-deficiency. We observed the low lattice thermal conductivity κL of 0.53 W m−1 K−1 at 300 K for InTe0.99, which is about 25 % decreased value than those of InTe. The Te-deficiency also induces energy band gap so that the electrical resistivity and Seebeck coefficient are increased due to the decrease of carrier c...

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom