Open AccessPerspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Author(s) -
S. J. Pearton,
F. Ren,
Marko J. Tadjer,
Jihyun Kim
Publication year - 2018
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5062841
Subject(s) - materials science , power semiconductor device , optoelectronics , power electronics , electrical engineering , gallium nitride , schottky diode , electronics , high voltage , wide bandgap semiconductor , mosfet , power module , engineering physics , transistor , diode , voltage , power (physics) , nanotechnology , engineering , physics , layer (electronics) , quantum mechanics
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