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Hole-transport comparison between solution-processed and vacuum-deposited organic semiconductors
Author(s) -
Deepthi Kamath Mangalore,
Paul W. M. Blom,
GertJan A. H. Wetzelaer
Publication year - 2019
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5058686
Subject(s) - organic semiconductor , vacuum deposition , materials science , amorphous solid , charge carrier , deposition (geology) , electron mobility , electric field , charge (physics) , molecule , diffusion , organic electronics , biphenyl , ultra high vacuum , analytical chemistry (journal) , thin film , chemical physics , nanotechnology , organic chemistry , optoelectronics , chemistry , thermodynamics , voltage , paleontology , physics , transistor , quantum mechanics , sediment , biology
Charge transport in the amorphous organic small molecules α-NPD (N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine) and Spiro-TAD (2,2′,7,7′-tetrakis(N,N-diphenylamino)-9,9-spirobifluorene) is investigated in solution-processed films and compared to charge transport in vacuum-deposited films of the same molecule. By optimizing the solution-deposition conditions, such as solvent and concentration, equal charge-transport parameters for solution-processed and vacuum-deposited films are demonstrated. Modeling of the charge carrier transport characteristics was performed by drift-diffusion simulations. The dependence of the charge carrier mobility on temperature, carrier density, and electric field was found to be the same for vacuum deposition and solution processing. In both material processing cases, hole mobilities of 4 × 10−8 m2 V−1 s−1 for spiro-TAD and 0.9 × 10−8 m2 V−1 s−1 for α-NPD are obtained, demonstrating that solution processing can be a viable alternative to vacuum deposition in terms of charge transport.Charge transport in the amorphous organic small molecules α-NPD (N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine) and Spiro-TAD (2,2′,7,7′-tetrakis(N,N-diphenylamino)-9,9-spirobifluorene) is investigated in solution-processed films and compared to charge transport in vacuum-deposited films of the same molecule. By optimizing the solution-deposition conditions, such as solvent and concentration, equal charge-transport parameters for solution-processed and vacuum-deposited films are demonstrated. Modeling of the charge carrier transport characteristics was performed by drift-diffusion simulations. The dependence of the charge carrier mobility on temperature, carrier density, and electric field was found to be the same for vacuum deposition and solution processing. In both material processing cases, hole mobilities of 4 × 10−8 m2 V−1 s−1 for spiro-TAD and 0.9 × 10−8 m2 V−1 s−1 for α-NPD are obtained, demonstrating that solution processing can be a viable alternative to vacuum deposition in ter...

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