Open AccessMOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
Author(s) -
Yuewei Zhang,
Fikadu Alema,
Akhil Mauze,
Onur S. Koksaldi,
Ross Miller,
A. Osinsky,
James S. Speck
Publication year - 2018
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5058059
Subject(s) - ohmic contact , materials science , electron mobility , metalorganic vapour phase epitaxy , chemical vapor deposition , hall effect , epitaxy , doping , thin film , analytical chemistry (journal) , optoelectronics , impurity , electrical resistivity and conductivity , nanotechnology , electrical engineering , chemistry , organic chemistry , layer (electronics) , chromatography , engineering
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