Open AccessStudy of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation
Author(s) -
Philippe Ferrandis,
Mariam El-Khatib,
Marie-Anne Jaud,
E. Morvan,
Matthew Charles,
Gérard Guillot,
G. Brémond
Publication year - 2019
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5055926
Subject(s) - materials science , optoelectronics , deep level transient spectroscopy , transistor , etching (microfabrication) , capacitance , wide bandgap semiconductor , layer (electronics) , electrode , voltage , nanotechnology , chemistry , electrical engineering , silicon , engineering
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